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Dr. Hollingsworth joined ITN as a senior scientist in May 2000, following ITN’s purchase of the research portion of Materials Research Group, Inc. Dr. Hollingsworth was a co-founder of MRG and manager of R&D from the inception of the company in 1991. He has 20 years experience in process development of a-silicon alloy based materials and devices grown by PECVD. His accomplishments include one of the first reports of amorphous solar cells using silicon carbide as the absorber, the first a-silicon pin diode high energy particle detector capable of direct detection of minimum ionizing electrons, and the development of a-silicon as a vacuum photoresist. He led the development of thin film materials for microbolometer infrared cameras, resulting in an uncooled LWIR camera with 30mK NETD. This Army phase II effort was nominated for a 2005 DOD SBIR Quality Award. He has extensive experience in all phases of thin film photovoltaic manufacturing, from equipment design, construction, and control software to process development and device characterization. He has over 40 publications and 1 patent on semiconductor devices and materials. | 