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After receiving his Ph.D. in Physics from the University of Illinois (Urbana-Champaign), Dr. Schowalter was employed by the GE Research and Development Center in Schenectady, NY. He joined Rensselaer Polytechnic Institute (RPI) in 1987 and was chair of the Physics Department from 1997 to 2000 at which time he resigned to work with Crystal IS and is currently on a leave of absence from RPI. He has over 25 years experience in crystal growth and nano-probe technologies for which he has received international recognition and has focused his efforts on AlN crystal growth for the last eight years. He has published over 140 articles, co-edited four proceedings volumes, given over 50 invited talks, and holds three US patents (with 5 pending). He has co-chaired several international symposia in the areas of thin film crystal growth and nano-probe technologies. He was a co-instructor for the 1999 and 2000 Fall MRS Tutorials on nitride semiconductors and a tutorial instructor on nitride semiconductor substrates at the Gorham Compound Semiconductor Outlook Meetings of 2000 (San Diego) and 2002 (Taiwan). Dr. Schowalter also won the Tech Valley Business Plan competition for Crystal IS in 2003. | 