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Albert Fazio is an Intel Fellow and Director of Memory Technology Development in the Technology and Manufacturing Group. In his current position, Fazio is responsible for exploring and developing flash memory and multi-level cell memory technologies as well as novel memory technology ideas.
Since joining Intel in 1982, Fazio has been involved in various engineering roles in memory development programs including SRAM, EPROM, E2PROM, NVRAM and Flash Memories. His technical contributions and leadership have helped pioneer new capabilities in the area of Flash, Strata-Flash, and Flash and logic combinations, providing cost and functionality advantages to Intel products.
Fazio's technical papers have been published in several publications and at international technical conferences. He received outstanding paper awards at the IEEE International Reliability Physics Symposium and IEEE International Solid-State Circuits Conference. Fazio holds 24 patents and has received three Intel Achievement Awards. He frequently serves as a panelist on international memory panels and gives technical seminars and talks to the industry and universities. He previously served as Technical and General Chairman of the IEEE Non-Volatile Semiconductor Memory Workshop.
Fazio received his bachelor's of science in Physics from The State University of New York at Stony Brook in 1982. He was born in New York City in 1961. | 